2n7002 - 7 - 02 document number: ds 36649 rev. 2 - 3 1 of 6 www.diodes.com january 2015 ? diodes incorporated 2n7002 - 7 - 02 n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c 6 0v 7.5 ? @ v gs = 5 v 210ma description this mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor control ? power management functions features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? small surface mount package ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note s 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil - std - 202, method 208 ? te rminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4 ) part number case packaging 2n7002 - 7 - 02 sot23 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 201 3 201 4 201 5 201 6 201 7 code n p r s t u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view equivalent circuit top view k72 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 20 13 ) m = month (ex: 9 = september) shanghai a/t site chengdu a/t site not recommended d g s y k72 y m ym k72 y m
2n7002 - 7 - 02 document number: ds 36649 rev. 2 - 3 2 of 6 www.diodes.com january 2015 ? diodes incorporated 2n7002 - 7 - 02 maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v drain - gate voltage r gs ? ? dgr 60 v gate - source voltage continuous pulsed v gss 20 40 v continuous drain current (note 5 ) steady state t a = + 25 c t a = + 85 c t a = + 100 c i d 170 120 105 m a continuous drain current (note 6 ) steady state t a = + 25 c t a = + 85 c t a = + 100 c i d 210 150 135 m a maximum body diode f orward current (note 6 ) continuous i s 0.5 a thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 38 0 m w (note 6 ) 52 0 thermal resistance, junction to ambient (note 5 ) r ja 335 c/w (note 6 ) 243 thermal resistance, junction to case (note 6 ) r j c 89 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 ? ? gs = 0v, i d = 10 c = + 25c @t c = + 125c i dss ? ? ds = 60v, v gs = 0v gate - body leakage i gss ? ? gs = 20v, v ds = 0v on characteristics (note 7 ) gate threshold voltage @t j = + 25c @t j = + 0 c ~ + 100 c (note 8 ) v gs(th) 2.1 1.8 ? ? ? 2. 5 5 2.6 5 v v ds = v gs , i d = 250 ds = v gs , i d = 250 j = + 25c @t j = + 125c r ds (on) ? ? ? gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on - state drain current i d(on) 0.5 ? ? gs = 10v, v ds = 7.5v forward transconductance g fs 80 ? ? ds = 10v, i d = 0.2a diode forward voltage v sd ? gs = 0v, i s = 115ma dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? gs = 4.5 v ) q g ? ? ? ds = 1 5 v, i d = 0.2 a gate - source charge q gs ? ? ? gd ? ? ? switching characteristics (note 8 ) turn - on delay time t d(on) ? ? dd = 30v, i d = 0.2a, r l = 150 ? gen = 10v, r gen = 25 ? r ? ? d(off) ? ? ? f ? ? ? notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
2n7002 - 7 - 02 document number: ds 36649 rev. 2 - 3 3 of 6 www.diodes.com january 2015 ? diodes incorporated 2n7002 - 7 - 02 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d v = 3.5v gs v = 4.5v gs v = 5.0v gs v = 10v gs v = 4.0v gs v = 3.2v gs 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 5.0v gs v = 10v gs 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = v i = 100ma gs d 5.0 v = v i = 500ma gs d 10 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = 0.5a d i = 50ma d 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a
2n7002 - 7 - 02 document number: ds 36649 rev. 2 - 3 4 of 6 www.diodes.com january 2015 ? diodes incorporated 2n7002 - 7 - 02 1.5 1.8 2.1 2.4 2.7 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 1 10 100 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss c oss c rss f = 1mhz 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = v i = 500ma gs d 10 v = v i = 100ma gs d 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s v = 15v i = a ds d 0.2
2n7002 - 7 - 02 document number: ds 36649 rev. 2 - 3 5 of 6 www.diodes.com january 2015 ? diodes incorporated 2n7002 - 7 - 02 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0. 890 1. 0 0 0.975 k1 0.903 1.10 1.0 25 l 0.45 0.61 0.55 l 1 0. 2 5 0. 55 0. 40 m 0.085 0.1 50 0.11 0 a ? all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z j k1 k l1 h l m all 7 a c b d a
2n7002 - 7 - 02 document number: ds 36649 rev. 2 - 3 6 of 6 www.diodes.com january 2015 ? diodes incorporated 2n7002 - 7 - 02 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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